SiC MOSFET C-V Curves Analysis with Floating Drain Configuration

SiC MOSFETs have already replaced silicon-based device in power applications, even if some technological issues are still not solved. Among others, the complex traps distribution at SiC/SiO 2 interface is of foremost importance. Interface affect overall behavior, modifying channel mobility and introducing hysteresis. In this work, capacitance when Drain terminal floating, studied through numerical analysis. The effects its properties on such curves has been along with temperature effects. Experimental carried out various temperatures compared to same trends results.